| TECHNICAL PROGRAM COMMITTEE | |||
 |
High voltage: | ||
H.R. Chang |
International Rectifier, USA |
||
| A. Agarwal | Cree, USA | ||
| V. Benda | Czech Technical University, Czech Republic | ||
| P. Chow | Rensselaer Polytechnic Institute, USA | ||
| M.K. Han | Seoul National University, Korea | ||
| Reinhard Herzer | Semikron, Germany | ||
| M. Hoshi | Nissan, Japan | ||
| H. Iwamoto | Melco, Japan | ||
| T. Kimoto | Kyoto University, Japan | ||
| D. Kinzer | Fairchild, USA | ||
| S. Linder | ABB, Switzerland | ||
| L. Lorenz | Infineon Technologies, Germany | ||
| P. Mawby | University of Wales Swansea, UK | ||
| J. Millan | CNM, Spain | ||
| M. Mori | Hitachi, Japan | ||
| D. Pattanayak | Vishay-Siliconix, USA | ||
| J.-L. Sanchez | LAAS-CNRS, France | ||
| Y. Seki | Fuji Hitachi Power Semiconductor, Japan | ||
| David Sheridan | SemiSouth, USA | ||
| R. Sittig | Braunschweig Institute of Electrophysics, Germany | ||
| P. Spirito | University of Naples, Italy | ||
| Y. Sugawara | Kansai Electric Power, Japan | ||
| S. Yoshida | Furukawa, Japan | ||
|
Integrated power: | ||
| D. Disney | Advanced Analogic Technologies, USA | ||
| H. Akagi | Tokyo Inst. of Technology, Japan | ||
| S. Banerjee | Power Integrations, USA | ||
| C. Contiero | STMicroelectronics, Italy | ||
| W. Fichtner | Swiss Federal Institute of Technology, Swiss | ||
| A. Huang | N. Carolina State University, USA | ||
| T. Letavic | Philips, USA | ||
| S. Ekkanath Madathil | De Montfort University, UK | ||
| G. Majumdar | Mitsubishi, Japan | ||
| P. Moens | AMI Semiconductor, Belgium | ||
| W.T. Ng | University of Toronto, Canada | ||
| S. Pendharkar | Texas Instruments, USA | ||
| A. Shibib | International Rectifier, USA | ||
| D. Silber | University of Bremen, Germany | ||
| J. Sin | Hong Kong University of Science and Technology, China | ||
| H. Tadano | Toyota, Japan | ||
| R. Zhu | Freescale Semiconductor, USA | ||
|
Low voltage & RF: | ||
| G . Dolny | Fairchild Semiconductor, USA | ||
| R. van Dalen | NXP Semiconductors, Belgium | ||
| M. Darwish | Maxpower Semiconductor, USA | ||
| P. Hower | Texas Instruments, USA | ||
| V. Khemka | Freescale Semiconductor, USA | ||
| S. Matsumoto | NTT, Japan | ||
| A. Nakagawa | Toshiba, Japan | ||
| A. Salama | University of Toronto, Canada | ||
| J. Shen | University of Central Florida, USA | ||
| A. Strachan | National Semiconductor, USA | ||
| A. Sugai | Shindengen Electric, Japan | ||
| A. Tamagawa | NEC Electronics, Japan | ||
| F. Udrea | Cambridge University, UK | ||
| T. Yachi | Tokyo University of Science, Japan | ||
| I. Yoshida | Renesas, Japan | ||
