Partha Dutta
— Assistant Professor of Electrical, Computer, and Systems Engineering

Education:
— Ph.D., Experimental Condensed Matter Physics, Indian Institute of Science, 1996
— M.S., Physics, Indian Institute of Technology, Bombay, 1990
— B.S., Physics, Chemistry, Mathematics, Bombay University, 1988

Career Highlights:
While completing his doctoral degree, Dutta worked as a Council for Scientific and Industrial Research Fellow at the Indian Institute of Science, in Bangalore, India. Subsequently, he served as a visiting scientist at the Universidad Autonoma in Madrid, Spain and at the Solid State Physics Laboratory of Delhi, India. He joined Rensselaer in 1996 as a research associate in the Department of Mechanical Engineering, Aeronautical Engineering, and Mechanics. Three years later, he was appointed as a research assistant professor in the Electrical, Computer, and Systems Engineering Department. In 2000, he was offered a tenure track assistant professor position.

Dutta has received two U.S. patents and has several more pending. He has published over 50 technical articles in high profile referred journals and presented more than 40 talks in national and international conferences and meetings. His professional awards include the National Science Foundation Early Faculty CAREER Award in 2001, the Rensselaer Trustees Award for Faculty Achievement in 2001, the Martin Foster Award for Best Ph.D. Thesis of the Year in 1997, and the Young Scientist Award at the Eighth International Workshop on Physics of Semiconductor Devices, in Delhi, India, in 1995.

Research Areas:
Dutta's research interests include the development of materials technology for large-scale applications and manufacturing. His broad expertise is in the area of advanced photonic and electronic materials and devices. His materials research and development efforts span from nanosized crystals to large diameter bulk ingots. He has over ten years of experience in semiconductor bulk crystal growth and wafer processing, electronic and optoelectronic device fabrication, processing, and testing. Two of his key innovations in the last five years include development of large diameter ternary and quaternary bulk III-V substrates, and process development for large-scale manufacturing of high-quality, tunable-size nanocrystals (or quantum dots).

He and his team of graduate students are conducting research in the areas of ternary bulk crystal growth, nanomaterials, free space optical communication, infrared photodetectors and photovoltaic devices, and III-V antimonide processing.

Selected Publications:
P.S. Dutta and T.R. Miller, "Engineering Phase Formation Thermo-Chemistry for Crystal Growth of Homogeneous Ternary and Quaternary III-V Compound Semiconductors from Melts," Journal of Electronic Materials, 29, 956-963, (2000).

P.S. Dutta and A.G. Ostrogorsky, "Strong Band Gap Narrowing in Quasi-Binary
(GaSb)x(InAs)1-x Crystals Grown from Melt," Journal of Crystal Growth, 197, 1-6, (1999).

P. Hidalgo, B. Mendez, J. Piqueras, P.S. Dutta, and E. Dieguez, "Scanning Tunneling Spectroscopy of Transition-Metal-Doped GaSb," Physical Review B, 60, 10613-10615, (1999).

V. Bermudez, P.S. Dutta, M.D. Serrano, and E. Dieguez, "On the Single Domain Nature of Stoichiometric LiNbO₃ Grown from Melts Containing K₂O," Applied Physics Letters, 70, 729-731, (1997).

P.S. Dutta, H.L. Bhat, and V. Kumar, "The Physics and Technology of Gallium Antimonide: An Emerging Optoelectronic Material," Applied Physics Reviews, Journal of Applied Physics 81, 5821- 5870, (1997).

P.S. Dutta, A.K. Sreedhar, H.L. Bhat, G.C. Dubey, V. Kumar, E. Dieguez, U. Pal, and J. Piqueras, "Passivation of Surface and Bulk Defects in p-GaSb by Hydrogenated Amorphous Silicon Treatment," Journal of Applied Physics, 79, 3246-3252, (1996).

P.S. Dutta, K.S. Sangunni, H.L. Bhat, and V. Kumar, "Optical and Electrical Properties of Hydrogen Passivated Gallium Antimonide," Physical Review B, 51, 2153-2158, (1995).

P.S. Dutta, A.K. Sreedhar, H.L. Bhat, G.C. Dubey, Vikram Kumar, and E. Dieguez, "Current Transport Properties of Metal/a-Si:H/GaSb Structures," Applied Physics Letters, 67, 1001-1003, (1995).

G. Panin, P.S. Dutta, J. Piqueras, and E. Dieguez, "P- to N-type Conversion in GaSb by Ion Beam Milling," Applied Physics Letters, 67, 3584-3586, (1995).

P.S. Dutta, K.S.R.K. Rao, K.S. Sangunni, H.L. Bhat, and V. Kumar, "Donor-Related Deep Level in Bulk GaSb," Applied Physics Letters, 65, 1412-1414, (1994).

P.S. Dutta, K.S. Sangunni, H.L. Bhat, and V. Kumar, "Sulphur Passivation of Gallium Antimonide Surfaces, Applied Physics Letters, 65, 1695-1697, (1994).

Contact Information:
Partha Dutta
6015 Low Center for Industrial Innovation
Rensselaer Polytechnic Institute
Troy, N.Y. 12180
(518) 276-8277
duttap@rpi.edu

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