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Alain E. Kaloyeros
— Founding Dean of the School of Nanosciences and NanoEngineering
— Executive Director of the Center of Excellence in Nanoelectronics
–
New York
— Executive Director of the Interconnect Focus Center
– New York
— Executive Director of the Energy/Environment Technologies
Applications Center
— Executive Director of the New York State Center for
Advanced Thin
Film Technology
— Professor of Physics, University at Albany, State University
of New York
Education:
Ph.D., Experimental Condensed-Matter Physics, University of
Illinois at Urbana-Champaign, 1987
License d' Enseignement, Physics and Mathematics, Lebanese
University, 1978
Career Highlights:
Kaloyeros holds numerous roles at the University at Albany,
including founding dean of the School of Nanosciences and
NanoEngineering and executive director of the UAlbany Institute
for Materials. He joined the university in 1988 as an assistant
professor of physics. In 1993, he began three years of work
as a special assistant to the vice president for research.
He has served as the co-director of the UAlbany/Rensselaer
Joint Laboratories for Advanced Materials (JLAM) for ten years.
In 2002, the Research Foundation of the
State University of New York presented Kaloyeros with its
Outstanding Inventor Award. He is the recipient of numerous
other honors, including the R&D 100 Award for one of the
Most Technologically Significant Inventions of the Year in
2001 from R&D Magazine, the Academic Laureate Award
from the University at Albany Foundation in 1995, the Presidential
Young Investigator Award from the National Science Foundation
(NSF) in 1991, the Research Initiation Award from the NSF
in 1990, and the Faculty Research Award from the University
at Albany in 1989, 1990, and 1991. He also was named Citizen
of the University by the University at Albany Foundation in
1999.
Kaloyeros has earned twelve patents, and
has published over 125 articles and five invited book chapters.
Research Areas:
Kaloyeros is involved in the development and optimization
of advanced vapor phase and liquid phase atomic layer fabrication
processes for advanced nanoelectronic, optoelectronic, and
photonic single and multi-layered ultrathin film structures
for integration in computer chips, biological sensors, microsystems,
and energy devices.
In particular, he works with thermal, plasma,
and high-density plasma physical and chemical vapor deposition
(CVD), as well as atomic layer deposition (ALD) of advanced
nanomaterials in tailored ultrathin film and multi-layered
structure forms. He is also involved with in-situ and ex-situ
electron-, ion-, and x-ray characterization of film surfaces,
interfaces, and bulk physical, chemical, and electrical properties.
His research achievements include creating
a CVD Cu-based multi-layered metallization scheme for sub-quarter-micron
device generations; low-temperature, plasma-promoted CVD Al
interconnects for the 0.25 micrometer computer chip technology;
high-temperature superconductor interconnect technology for
high speed cryoelectronic devices; low-temperature CVD GaN
on Si for optoelectronic applications; Ti-based refractory
coatings for use as diffusion barrier/glue layer in ultra-large
scale integration (ULSI) computer devices; and molecular device
and interconnect technologies for Gigascale computer chips.
Selected Publications:
A.E. Kaloyeros, E.T. Eisenbraun, J. Welch, and R.E. Geer,
"Molecular Interconnects: Exploiting Nanotechnology for
TeraHertz Interconnects," Semiconductor International
(January 2003).
R.J. Gutmann, J.-Q. Lu, J.J. MacMahon, P.D.
Persans, T.S. Cale, E. Eisenbraun, J. Castracane, and A.E.
Kaloyeros, "High Density Multifunctional Integration
(HDMI) for Low-Cost Micro/Nano/Opto/Bio Heterogeneous Systems,"
in press, NanoTech 2003 Conference Digest (2003).
F. Papadatos, S. Skordas, S. Consiglio,
E. Eisenbraun, and A.E. Kaloyeros, "Characterization
of Ruthenium and Ruthenium Oxide Thin Films Deposited by Chemical
Vapor Deposition for CMOS Gate Oxide Applications," in
press, Materials Research Society Proceedings, (2003).
S. Skordas, F. Papadatos, G. Nuesca, E.T.
Eisenbraun, and A.E. Kaloyeros, "Low Temperature Metal
Organic Chemical Vapor Deposition of Al2O3
for Advanced CMOS Gate Dielectric Applications" submitted,
Journal of Materials Research, (2002).
J.-Q. Lu, Y. Kwon, G. Rajagopalan, M. Gupta,
J. McMahon, K.-W. Lee, R.P. Kraft, J. F. McDonald, T.S. Cale,
R.J. Gutmann, B. Xu, E. Eisenbraun, J. Castracane, and A.E.
Kaloyeros, "High-Density Multifunctional Integration
Schemes," in Proceedings of 2002 IEEE International
Interconnect Technology Conference (IITC), 78-80, (2002).
D. Anjum, K. Dovidenko, S. Oktyabrsky, E.
Eisenbraun, and A. Kaloyeros, "Physical Properties and
Diffusion Characteristics of CVD-Grown TiSiN Films in: Advances
in Surface Engineering - Fundamentals and Applications,"
in press, Materials Research Society Proceedings, 697,
(2002).
S. Oktyabrsky, J. Castracane, and A.E. Kaloyeros,
"Emerging Technologies for Chip-Level Optical Interconnects,"
in press, Proceedings of the International Society for
Optical Engineering, 4652, (2002).
K. Vydianathan, G. Nuesca, G. Peterson,
E.T. Eisenbraun, J.J. Sullivan, B. Han, and A.E. Kaloyeros,
"Metalorganic Chemical Vapor Deposition of Titanium Oxide
for Microelectronics Applications," Journal of Materials
Research, 16, 1838,
(2001).
E. Eisenbraun, A. Klaver, Z. Patel,
G. Nuesca, and A. Kaloyeros, "Low Temperature Metalorganic
Chemical Vapor Deposition of Conformal Silver Coatings for
Applications in High Aspect Ratio Structures," Journal
of Vacuum Science Technology B, 19,
585, (2001).
A.E. Kaloyeros and E.T. Eisenbraun, "Ultrathin
Diffusion Barriers/Liners for Gigascale Copper Metallization,"
Annual Review of Materials Science, 30,
363, (2000).
A.R. Londergan, G. Nuesca, C. Goldberg,
G. Peterson, B. Arkles, J.J. Sullivan, and A.E. Kaloyeros,
"Interlayer Mediated Epitaxy of Cobalt Silicide on Si(100)
from Low Temperature CVD of Cobalt Formation Mechanisms and
Associated Properties," Journal of the Electrochemical
Society, 148, C21,
(2000).
A.E. Kaloyeros, X. Chen, S. Lane, H. Frisch,
and B. Arkles, "Tantalum Diffusion Barrier Grown by Inorganic
Plasma-Promoted Chemical Vapor Deposition: Performance in
Copper Metallization," Journal of Materials Research,
15, (12), 2800-2810, (2000).
Contact Information:
Alain Kaloyeros
Cestm B250
University at Albany
251 Fuller Road
Albany, N.Y. 12203
(518) 442-4533
akaloyeros@uamail.albany.edu
http://www.albanynanotech.org/
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