Bernard S. Meyerson
Chief Technologist, IBM Technology Group
Ph.D., Solid-State Physics, City College of the City University
of New York, 1980
M.S., Physics, City College of the City University of New
Meyerson joined the IBM Research division in 1980 and now
serves as Chief Technolgist for IBM's Technology Group, and
Vice President of the Communications Research and Development
A Fellow of the Institute of Electrical
and Electronics Engineers (IEEE) and the American Physical
Society, Meyerson holds over 40 patents, and has published
several hundred technical papers. Throughout his career he
has earned numerous prestigious awards, including the IEEE
Electron Devices Society J.J. Ebers Award, the 1999 United
States Distinguished Inventor of the Year award from the U.S.
Patent and Trademark Office, and the 1999 IEEE Ernst Weber
Engineering Leadership Award. In 1997, both the New York State
Legislature and the Eastern New York Intellectual Property
Law Association (ENYIPLA) named him Inventor of the Year.
He was elected to the National Academy of Engineering in 2002.
In 1992, Meyerson was named an IBM Fellow, his company's highest
Meyerson is a pioneer in the field of materials science who
has made major advancements in semiconductor research. His
significant contributions include leading the IBM team of
researchers that developed silicon-germanium (SiGe) Heterojunction
Bipolar Transistor (HBT) technology.
By shortening the chip development process
and replacing more expensive, exotic materials with SiGe,
he and his team created smaller, cheaper, faster chips. SiGe
technology has led to numerous commercial and consumer products,
including 40Gbit/sec SONET standard data systems and 802.11b
11Mbit/sec wireless LAN cards.
Meyerson's work with SiGe helped make IBM
a leading chip provider to the communications industry, with
strong relationships spanning companies as diverse as Tektronix,
Hughes Electronics, Northern Telecom, Intersil, Teradyne,
and many others.
K. Ismail, M. Arafa, K.L. Saenger, J.O. Chu, and B.S. Meyerson,
"Extremely High Electron Mobility in Si/SiGe Modulation-Doped
Heterostructures," Applied Physics Letters, 66,
(9), 1077-1079, (1995).
B.S. Meyerson, "High Speed Silicon-Germanium
Electronics," Scientific American, 270,
(3), 42-47, (March 1994).
F.K. LeGoues, B.S. Meyerson, and J. Morar,
"Anomalous Strain Relaxation in SiGe Thin Films and Superlattices,"
Physical Review Letters, 66,
K. Ismail, B.S. Meyerson, and P.J. Wang,
"High Electron Mobility in Modulation Doped Si/SiGe,"
Applied Physics Letters, 58,
G.L. Patton, J.H. Comfort, B.S. Meyerson,
E.F. Crabbe, G.J. Scilla, E. DeFresart, J.M.C. Stork, J.Y.-C.
Sun, D.L. Harame, and J. Burghartz, "75 GHz f t
SiGe Base Heterojunction Bipolar Transistor," Electron
Device Letters, 11,
G.L. Patton, D.L. Harame, J.M.C. Stork,
B.S. Meyerson, G.J. Scilla, and E. Ganin, "Graded SiGe
Base/Poly Emitter Heterojunction Bipolar Transistors,"
Electron Device Letters, 10,
D.L. Harame, J.M.C. Stork, G.L. Patton,
S.S. Iyer, B.S. Meyerson, G.L. Scilla, E.F. Crabbe, and E.
Ganin, "Hi Performance Si and Si:Ge-base PNP Transistors,"
IEEE International Electron Devices Meeting (IEDM) '88
Technical Digest, (1988).
D.L. Harame, J.M.C. Stork, B.S. Meyerson,
T.N. Nguyen, and G.J. Scilla, "Epitaxial Base Transistors
Fabricated by UHV/CVD Low Temperature Epitaxy," Proceedings
of the IEEE International Electron Devices Meeting (IEDM),
B.S. Meyerson, "Low Temperature Silicon
Epitaxy by Ultra-High Vacuum/Chemical Vapor Deposition,"
Applied Physics Letters, 48,
B.S. Meyerson and F.W. Smith, "Electrical
and Optical Properties of Hydrogenated Amorphous Carbon Films,"
Journal of Non-Crystalline Solids, 35-36,
Bernard S. Meyerson
IBM T.J. Watson Research Center
P.O. Box 218
Yorktown Heights, N.Y. 10598
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