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Unique materials properties of wide band
gap semiconductors make them extremely promising for high-power
high-temperature high-frequency applications, including applications
for base stations for wireless communication systems.
In the Center for Broadband Data Transport
Science and Technology, researchers are exploiting the unique
properties of these compounds to produce devices that exhibit
record power levels and low noise operation required for future
data transport systems. Other wide band gap semiconductor
applications under development include visible and ultra-violet
light-emitting diodes, and acousto-optic devices. Potential
uses of this technology include massive data storage systems,
as well as applications in solid-state lighting and in the
detection of hazardous biological agents.
Ongoing research studies also involve the
theory and experimental investigations of ballistic transport
in semiconductors, as well as epitaxial growth, materials
characterization, device processing and fabrication, device
design, and device characterization. Devices include heterojunction
transistors, light-emitting diodes, and lasers for communication,
lighting, and sensing applications.
Among the pioneering contributions in compound
semiconductor materials and devices made by Center researchers
are the discovery and first analysis of alloy broadening,
the development of delta-doped structures, superlattice doping
in p-type GaN and AlGaN for increased acceptor activation,
and compositional parabolic grading for elimination of band
discontinuities in unipolar heterojunctions. Members also
have demonstrated the first resonant-cavity light-emitting
diode (RCLED), which is the first practical device taking
advantage of spontaneous emission enhancement; and also showed
the first spontaneous emission and absorption enhancement
in Er-doped Si/SiO2 microcavities.
Other recent accomplishments include polarization-enhanced
ohmic contacts in III-V nitride materials, the explanation
of the high diode ideality factors (> 2.0) found in III-V
nitride p-n junction diodes, and the demonstration of high-reflectivity
omni-directional reflectors in LEDs for lighting applications.
For more information on the Center's
work on wide band gap semiconductors, please contact:
Dr. Michael Shur, Director
(518) 276-2201
shurm@rpi.edu
Photonic
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Wide Band Gap Semiconductors
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