The SiC diode is a high voltage diode that can has a higher breakdown voltage than the common Si diode. Due to the wider bandgap of SiC material, SiC diode has lower intrinsic carrier density and higher built-in voltage, therefore, it can stand higher reverse bias. The SiC diode used in current setup is made by Cree Research Inc. The diode I-V characteristics is measured by applying a staircase sweep voltage to the diode and monitoring the current.

The experimental parameters to be entered in the Source Setup pop-up panel include the start, stop, and number of steps for the sweep. You may also select the compliance current for protection. The diode voltage is limited to (-100V, 3V).

To run the experiment, go back to Remote Lab Homepage.