Semiconductor Devices and Models II
Possible Topics for Final Projects.
Heterojunction Bipolar Transistors
Wide band gap Heterojunction Bipolar Transistors
Ohmic Contacts. Technology and characterization.
Schottky Contacts.
Critical Comparison of Bipolar and MOSFET technologies. Is Bipolar technology a niche?
Metamorphic HEMTs
MESFETs versus HEMTs - advantages and disadvantages
Scaling of Si MOSFETs for Digital Applications.
Discuss scaling rules and size limitations. List all possible non-ideal effects and how you expect them to vary with scaling.
Propose solutions where you think they possible. Based on this discussion and literature search choose
AIM-Spice parameters for 1 µm, 0.5 µm, and 0.1 µm technology and design, simulate, and compare ring oscillators based on these devices.
Si MOSFETs for High Temperature Applications.
Analyze factors limiting high temperature performance. Estimate the highest operating temperature.
Compare with silicon. Analyze effects of temperature on ohmic and Schottky contacts. Compare with data in literature.
Develop reasonable MOSFET Spice model for the military range of temperature and simulate inverter
characteristics representative for this temperature range of operation.
Si MOSFETs Operating at Cryogenic Temperatures.
Analyze factors limiting cryogenic performance. How does it compare with other semiconductor materials?
Compare with data in literature. Develop reasonable MOSFET Spice model for 77 K
and simulate inverter characteristics representative for this temperature range of operation.
High Power Diodes.
Discuss factors limiting maximum power in diode switches. Analyze self-heating effects. Consider contacts and packaging.
Suggest system applications for different power levels.
SiC FETs.
Give a brief review of technical literature on this topic. Discuss basic limitations of SiC which may limit SiC FET performance.
Estimate acceptable contact resistances. Propose FET design and simulate the device characteristics using either
ATLAS-II or AIM-Spice.
SiC BJTs and HBTs
Critical look at BSIM-3 MOSFET model in SPICE.
Design of a-Si and poly-silicon TFTs
High-temperature FETs. Si, GaAs, GaN
Silicon-on-insulator Technology
GaN Devices for High Temperature Applications
Organic Thin Film transistors
MOSFET Modeling
InN Field Effect Transistors
InGaN JFET
InGaN MISFET
InGaN HEMT
Wide band gap power switches
Thermal dissipation in deep submicron MOSFETs
Polysilicon CMOS scaling