ECSE-696 – Semiconductor Devices and Models I

ECSE-6290 – Semiconductor Devices and Models II

Instructor: Michael Shur

E-mail: shurm@rpi.edu Home page: http://www.ecse.rpi.edu/shur/

Subject Description

Required Textbook

Prerequisites by topics

Detailed Course Description

Subject Description

The principle of operation, device physics, and analytical numerical, and circuit device models for semiconductor devices, such as bipolar junction transistors, metal-semiconductor junctions and transistors, heterostructure junctions and transistors. Selected advanced semiconductor devices, such as novel microwave devices, are also introduced. Prerequisite: SDM-I or equivalent.

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Grading:

Homework 50%

Final Project 50%

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AIM-Spice (please download from www.aimspice.com)

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Prerequisites by Topics

Basic knowledge of semiconductor devices or SDM I or equivalent

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Michael Shur shurm@rpi.edu

Text: Michael Shur “Introduction to Electronic Devices”

Detailed course Description. ECSE-6290 – Semiconductor Devices and Models II

Lecture	Dates	Topic	Lecture Slides and Reading Assignments	Homework
1,2	1/12	1. Introduction and review. Course goals and outline Semiconductor materials	01,02
3,4	1/26	Basic semiconductor equations Device building blocks: Schottky, ohmic contacts, p-n junctions	03, 04, 05Reading Assignment: Chapters 1, 2. Sections 3-1 to 3-4.
5,6	2/2	2. Bipolar Junction Transistor. The principle of operation Device physics	06,07	Hw 1 assigned on 2/3/04
7,8	2/9	High injection effects Modes of operation Current, voltage, and power gains Input and output impedances	08, Project selection	Topics for final projects selected
9,10	NO CLASS ON 2/16 CLASS ON 2/17	3. Bipolar Junction Transistor modeling Ebers-Moll model Gummel-Poon model BJT models in SPICE BJT parameter extraction BJT breakdown	09 10	Hw 1 is due, Hw 2 assigned
11,12	2/23	4. High Frequency Performance s-parameters f_T and f_max Microwave BJTs Microwave amplifiers 5. BiCMOS FET versus BJT CMOS BiCMOS technology	11, 12,13 Reading Assignment: Sections 4-1 to 4-3.
13,14	3/2	6. Heterostructure Bipolar Transistors Principle of operation Materials systems HBT designs State-of-the art performance HBT modeling HBT models in SPICE 7. BJT and HBT fabrication Designs Packaging Interconnects Passive components	18,16	HW2 is due HW 3 is assigned
15,16	NO CLASS on 2/9 3/16	8. Metal Semiconductor Field Effect Transistors Principle of operation Materials systems MESFET designs State-of-the art performance MESFET modeling MESFET models in SPICE MESFETs and MMICs 9. Heterostructure Field Effect Transistors Principle of operation Materials systems HFET designs State-of-the art performance HFET modeling HFET models in SPICE	17, 18 Reading Assignment: Sections 5-1 to 5-5.	Midterm presentions and discussions Hw 3 is due; Hw 4 is assigned
17,18	3/23	10. Wide Band Gap Materials and devices Materials systems: SiC, III-N, diamond SiC devices III-N FETs	19,20,21,22,23,24

19,20	3/30	11. Microwave and millimeter waves 12 Compound semiconductor digital integrated circuits 13. High speed transistors. Summary. Performance Comparison and new device physics ITRS Si versus III-V Si versus III-N Interconnect issue Contact issues	25, 26, 27 Reading Assignment: Section 6-4.
21,22	4/6	14. Solid State Lighting LEDs Photometry and human vision Color rendering Smart lighting Beyond visible – UV LEDs	28	Hw 4 is due; Hw 5 is assigned
23,24	4/13	15. Course Review. Questions and answers
25,26	4/20	Final presentations		Hw 5 due
27,28	4/27	Final presentations

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