ECSE-2210 Microelectronics Technology

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MT-Class-organization-Spring-2010.pdf

Physical-constants.pdf
Materials-Semiconductors-Silicon-Germanium-&-GaAs.pdf
Periodic-table-of-elements-1.pdf

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2010-MT-Exam-Midterm.pdf
2010-MT-Exam-Midterm-Solution.pdf
2010-MT-Exam-Final.pdf
2010-MT-Exam-Final-Solution.pdf

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A-MT-Ch01-Introduction-&-crystals.pdf
A-MT-Ch02-Energy-bands-&-electrons-&-holes.pdf
A-MT-Ch03-Intrinsic-&-extrinsic-semiconductors.pdf
A-MT-Ch04-Semiconductor-statistics.pdf
A-MT-Ch05-Carrier-drift-in-electric-fields.pdf
A-MT-Ch06-Excess-carriers-&-recombination.pdf
A-MT-Ch07-Carrier-generation-&-quasi-Fermi-levels.pdf
A-MT-Ch08-Diffusion-&-Einstein-relation.pdf
A-MT-Ch09-Carrier-injection-&-Continuity-equation.pdf

A-MT-Ch10-PN-junction.pdf
A-MT-Ch11-PN-junction-IV-characteristic.pdf
A-MT-Ch12-PN-junction-IV-Charge-control-method.pdf
A-MT-Ch13-PN-junction-Reverse-bias.pdf
A-MT-Ch14-PN-junction-Capacitance.pdf
A-MT-Ch15-PN-junction-Equivalent circuit.pdf
A-MT-Ch16-PN-junction-Deviations.pdf
A-MT-Ch17-Metal-Semiconductor-Junction.pdf
A-MT-Ch18-Diode-applications.pdf

A-MT-Ch19-BJT-History.pdf
A-MT-Ch20-BJT-Basics.pdf
A-MT-Ch21-BJT-Ebers-Moll-model.pdf
A-MT-Ch22-BJT-Early-effect.pdf
A-MT-Ch23-BJT-Avlanche-breakdown.pdf
A-MT-Ch24-BJT-Schottky-diode-clamp.pdf
A-MT-Ch25-BJT-Summary-of-operating-regimes.pdf
A-MT-Ch26-BJT-Fabrication.pdf
A-MT-Ch27-BJT-Drift-in-base.pdf
A-MT-Ch28-BJT-Wide-gap-emitter.pdf

A-MT-Ch29-JFETs-and-MESFETs.pdf
A-MT-Ch30-JFETs-and-MESFETs-Operation.pdf

A-MT-Ch31-MOSFET-Introduction.pdf
A-MT-Ch32-MOS-capacitor-Ideal.pdf
A-MT-Ch33-MOS-capacitor-Real.pdf
A-MT-Ch34-MOSFET-Operation.pdf
A-MT-Ch35-MOSFET-Fabrication-and-applications.pdf