Publications of historical relevancy and reviews
1904 Drude (Ann Phys) Optical properties & electon theory 1&2.pdf
1909 Lorentz (Teubner) The theory of electrons.pdf
1917 Einstein (Physikalische Zeitschrift) Zur Quantentheorie der Strahlung.pdf
1931 Kronig & Penney (Proc Royal Soc London) Quantum mechanics of electrons in crystal lattices.pdf
1946 Purcell (PR) Spontaneous emission probabilities at radio frequencies.pdf
1948 Bardeen Brattain (PRL) The Transistor-A semiconductor triode.pdf
1951 Haynes and Shockley (PR) The mobility and life of injected holes and electrons in Ge.pdf
1952 Shockley & Read (PR) Statistics of the recombinations of holes and electrons.pdf
1952 Hall (Phys Rev) Electron-hole recombination in Ge.pdf
1952 Welker (Zeit fur Naturforsch) On new semiconducting compounds.pdf
1953 Welker (Zeit fur Naturforsch) On new semiconducting compounds - Part II.pdf
1953 Urbach (PR) Long-wavelength edge of photographic sensitivity and of electronic absorption of solids.pdf
1954 Van Roosbroeck & Shockley (PR) Photon-radiative recombination of electrons and holes in Ge.pdf
1957 Kroemer (Proc IRE) Theory of wide-gap emitter transistors.pdf
1957 Sah Noyce Shockley (Proc IRE) Carrier generation and recombination in p-n junctions and p-n junction characteristics.pdf
1958 Van der Pauw (Philips Res Rep) A method of measuring specific resistivity and Hall effect of discs of arbitrary shape.pdf
1958 Van der Pauw (Philips Tech Rev) A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape.pdf
1967 Cox & Strack (SSE) Ohmic contacts for GaAs devices.pdf
1972 Berger (SSE) Models for contacts to planar devices.pdf
1976 Matthews & Blakeslee (J Cryst Growth) Defects in epitaxial multilayers.pdf
1982 Kroemer (Proc IEEE) Heterostructure bipolar transistors and integrated circuits.pdf
1992 Yokoyama (Science) Physics and device applications of optical microcavities.pdf
1999 Slusher (Rev Mod Phys) Laser technology.pdf
2001 Early (IEEE-TED) An early history of transistors.pdf

Publications cited in "Light Emitting Diodes" (Cambridge University Press, Cambridge UK, 2003) or related to LEDs.pdf
1907 Round (Electrical World) A note on carborundum.pdf
1950 MacAdam (J Opt Soc America) Maximum attainable luminous efficiency of various chromaticities.pdf
1950 Judd (NBS) Colorimetry.pdf
1962 Hall et al (PRL) Coherent light emission from GaAs junctions.pdf
1962 Holonyak & Bevacqua (APL) Coherent visible light emission from GaAsP junctions.pdf
1962 Nathan Dumke et al (APL) Stimulated emission of radiation from GaAs p-n junctions.pdf
1962 Quist Rediker et al (APL) Semiconductor maser of GaAs.pdf
1963 Holonyak (APL) The direct-indirect transition in GaAsP p-n junctions.pdf
1963 Ivey (J Opt Soc America) Color and efficiency of luminescent light sources.pdf
1964 Holonyak (Proc IEEE) Laser action in GaAsP and GaAs.pdf
1965 Thomas Hopefield Frosch (PRL) Isoelectronic traps due to N in GaP.pdf
1967 Varshni (Physica) Temperature dependence of the energy gap in semiconductors.pdf
1970 Joyce and Wemple (JAP) Junction current distrributions in thin resistive films of semiconductor junctions.pdf
1971 Thornton (J Opt Soc America) Luminosity and color-rendering capability of white light.pdf
1983 Ray et al (JAP) Properties of tin doped indium oxide (ITO) thin films prepared by magnetron sputtering.pdf
1984 Minden (Physics Today) Elephants and mahouts.pdf
1986 CIE (CIE 15-2 1986) Colorimetry.pdf
1987 Holonyak (IEEE J Quant Electronics) Semiconductor alloy lasers.pdf
1987 Tang & VanSlyke (APL) Organic electroluminescent diodes (OLEDs).pdf
1992 Schubert et al (APL) Resonant cavity light-emitting diode.pdf
1992 Sugawara et al (APL) High-brightness AlGaInP LEDs with DBR.pdf
1993 Schnitzer Yablonovitch et al (APL) Ultrahigh spontaneous emission quantum efficiency 99 percent internally and 72 percent externally from AlGaAs-GaAs-AlGaAs double heterostructures.pdf
1993 Schnitzer Yablonovitch Caneau Gmitter Scherer (APL) 30 percent external quantum efficiency from surface textured thin-film LEDs.pdf
1994 Nakamura et al (APL) Candela-class high-brightness InGaN-AIGaN DH blue LEDs.pdf
1994 Schubert et al (Science) Highly efficient light-emitting diodes with microcavities.pdf
1995 CIE (CIE 13-3 1995) Method of measuring and specifying colour rendering properties of light sources.pdf
1995 Lester et al (APL) High dislocation densities in high efficiency GaN-based light-emitting diodes.pdf
1996 Ohno (OSA handbook of applied photometry) Photometric standards.pdf
1997 Holonyak (Proc IEEE) The semiconductor laser - a 35-year perspective.pdf
1997 Rostky (EE Times) LEDs cast Monsanto in unfamiliar role.pdf
1998 Holonyak (IEEE J Select Top Quant Electronics) Impurity-induced layer disordering of QW heterostructures-discovery and prospects.pdf
1998 Heatley et al (IEEE Comm Mag) Optical wireless - the story so far.pdf
1998 Mukai (JCrystGr) UV LED.pdf
1999 Fink Joannopoulos et al (Science) A dielectric omnidirectional reflector.pdf
1999 Horng et al (APL) AlGaInP LEDs with mirror substrates fabricated by wafer bonding.pdf
1999 Ohno (OSA handbook of optics) Photometry and radiometry.pdf
1999 Passler (Phys Stat Sol B) Temperature dependence of fundamental bandgaps in semiconductors.pdf
2000 Haitz Kish Tsao Nelson (DOE white paper) Another semiconductor revolution - this time its lighting.pdf
2000 Holonyak (IEEE J Select Top Quant Electronics) From transistors to light emitters.pdf
2000 Ohno (IS&T Conference) CIE fundamentals for color measurements.pdf
2000 Ohno (OIDA Conference) Color issues of white LEDs.pdf
2000 Weber et al (Science) Giant birefringent optics in multilayer polymer mirrors.pdf
2001 Craford Holonyak & Kish (Scientific American) In pursuit of the ultimate lamp.pdf
2001 Bergh Craford et al (Physics Today) The promise and challenge of solid-state lighting.pdf
2001 Deopura et al (Opt Lett) Dielectric omnidirectional visible reflector.pdf
2001 Erchak Joannopoulos et al (APL) Enhanced coupling to vertical radiation using a 2D photonic crystal in a semiconductor LED.pdf
2001 Jeon et al (APL) Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions.pdf
2001 Kahn & Barry (Proc IEEE) Wireless infrared communications.pdf
2001 Kumar et al (AVS conference) UV-radiation curable epoxy-resin encapsulant for LEDs.pdf
2001 OShea et al (JAP) Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP TS LEDs.pdf
2001 Wierer Steigerwald Krames Martin Gotz Stockman et al (APL) High-power AlGaInN flip-chip light-emitting diodes.pdf
2002 Cerac Corp (www) Tin-doped indium oxide (ITO) for optical coating.pdf
2002 Carruthers (Wiley Encyclopedia) Wireless infrared communications.pdf
2002 Schubert (Note) Basics of LED encapsulants.pdf
2002 Streubel et al (IEEE JSTQE) High brightness AlGaInP light-emitting diodes.pdf
2002 Wu Walukiewicz Schaff et al (APL) Unusual properties of the fundamental bandgap of InN.pdf
2002 Wu Walukiewicz Schaff et al (APL) Small band gap bowing in InGaN alloys.pdf
2002 Berson et al (Science) Phototransduction by retinal ganglion cells setting circadian clock.pdf
2002 Hatter et al (Science) Melanopsin-containing retinal ganglion cells Architecture projections & intrinsic photosensitivity.pdf
2003 Dupuis (IEEE) The diode laser - the first 30 days 40 years ago.pdf
2004 Tsao (IEEE C&D Mag) - Solid-state lighting.pdf
2004 Fischer et al (APL) RT DC operation of 290 nm LEDs with mW power.pdf

Other publications
1979 Chandra and Eastman (Electronics Lett) Rectification at n-n heterojunctions.pdf
1979 Stringfellow (JAP) Electron mobility in AlGaAs.pdf
1985 Adachi (JAP) GaAs AlAs AlGaAs material parameters.pdf
1992 Tiwari and Frank (APL) Empirical fit to band discontinuities and barrier heights in III-V alloy systems.pdf
1994 Scofield (Amer J of Physics) A frequency domain description of a lock-in amplifier.pdf
1997 Muth Casey DenBaars et al (APL) Absorption coefficient energy gap exciton binding energy and recombination lifetime of GaN.pdf
1999 Ambacher et al (J Appl Phys) 2DEGs induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN-GaN heterostructures.pdf
1999 Margalith Coldren et al (APL) Indium tin oxide contacts to gallium nitride optoelectronic devices.pdf
2000 Ashby et al (APL) Low-dislocation-density GaN from a single growth on a textured substrate.pdf
2002 Voyles Citrin Gossmann et al (Nature) Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si.pdf
2002 Koleske et al (APL) Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence.pdf
2003 Shatalov Khan Shur et al (APL) Time resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm.pdf
2003 Kumakura Makimoto and Kobayashi (NTT) (JpnJAP) Ohmic contact to p-GaN using a strained InGaN contact layer.pdf
2003 Kuryatkov et al (APL) Electrical properties of pn junctions based on SLs of AlN-AlGaInN.pdf
2003 Walle & Neugebauer (Nature) Universal alignment of H levels in semiconductors.pdf