2008
2008 Kim JK (Advanced Materials) Light extraction enhancement of GaInN LEDs by graded refractive index ITO anti-reflection contact
2008 Kim JK (Science Magazine) Editors' Choice
2008 Mont FW (JAP) High-refractive-index TiO2 nanoparticle-loaded encapsulants for LEDs
2008 Poxson DJ et al (APL) Quantification of porosity and deposition rate of nanoporous films grown by oblique-angle deposition
2008 Schubert MF (Optics-Express) Design of multilayer anti-reflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm
2008 Schubert MF (APL) Polarization matched GaInN / AlGaInN MQW LEDs with reduced efficiency droop

2007
2007 Chen KX et al (APL) Sub band gap emission from native defects in Si doped AlGaN
2007 Chen KX et al (JAP) Recombination dynamics in UV LEDs with Si doped AlGaN-AlGaN MQW active region
2007 Kim MH (APL) Origin of efficiency droop in GaN based LEDs
2007 Kim JK et al (SPIE-Newsroom) Thin film coatings that reflect virtually no light
2007 Jung, Helmut (Compound Semiconductors) A life in research - The impact of Klaus Ploog
2007 Schubert MF (OpticsExpress) Linearly polarized emission from GaInN LEDs with polarization-enhancing reflector
2007 Schubert MF (OptExp) Encapsulation designed for extraction of polarized light from unpolarized sources
2007 Schubert MF et al (APL) Polarization of light emission by 460nm GaInN-GaN LEDs
2007 Schubert MF et al (APL) DBR consisting of high- and low-refractive-index thin film layers made of same material
2007 Schubert MF et al (APL) Effect of dislocation density on efficiency droop in GaInN-GaN LEDs
2007 Schubert EF et al (PSS) Low-refractive-index materials - A new class of optical thin-film materials
2007 Schubert EF et al (Nature Photonics March issue) Interview on anti-reflection coating made of low-index material
2007 Schubert EF and Kim JK (Compound Semiconductors) 100 years of LEDs
2007 Xi JQ (Science News) Nanoscale coating reflects almost no light
2007 Xi JQ et al (Nature Photonics) Thin film with low refractive index for broadband elimination of Fresnel reflection
2007 R&D Magazine Award for Graded-index anti-reflection coating
2007 Xi YA et al (APL) Kinetic study of Al-mole fraction in AlGaN grown by MOVPE
2007 Xi YA et al (J Cryst Growth) N-type AlGaN grown on sapphire by using a superlattice and low-T AlN interlayer
2007 Xi YA et al (JEM) Optimization of high quality AlN epitaxial layers

2006
2006 Kim et al (APL) Enhanced light-extraction in GaInN near-UV LED with Al-based ODR
2006 Kim et al (J Electrochem Soc) GaN Light-Emitting Triodes for high-efficiency hole injection
2006 Kim et al (APL) GaInN LED with conductive omnidirectional reflector having a low-refractive-index ITO layer
2006 Kim et al (J Electrochem Soc) Light extraction in GaInN LEDs using diffuse omnidirectional reflector
2006 Kim et al (SPIE Proc 6134) GaN light-emitting triodes for high-efficiency hole injection
2006 Kim et al (SPIE Proc 6134) Omni-directional reflectors for light-emitting diodes
2006 Kim et al Photonics Spectra 40 April 2006 Low-refractive-index nanorod layer improves LED efficiency
2006 Luo H et al (APL) Trapped whispering-gallery modes in white LEDs with remote phosphor
2006 Schubert et al (Rep Prog Phys) Solid-state lighting - A benevolent technology
2006 Shah et al (MRS Proc) Reduction of base access resistance in AlGaN HBTs using GaInN cap
2006 Xi JQ et al (IEEE PTL) Enhanced light extraction in GaInN LED with pyramid reflector
2006 Xi JQ et al (Optics Letters) Very low-refractive-index optical thin films consisting of an array of SiO2 nanorods
2006 Xi JQ et al Photonics Spectra 40 April 2006 Nanorods form thin film with ultralow refractive index
2006 Xi JQ et al (Laser Focus World 42 March 2006) Nanorods and air make low-index film
2006 Xi YA et al (JVST-A) Quantitative assessment of diffusivity of roughened surfaces for LEDs
2006 Xi YA et al (APL) High quality AlN on sapphire by MOCVD

2005
2005 Chhajed et al (JAP) Influence of Tj on chromaticity and CRI of trichromatic white-light sources based on LEDs
2005 Chhajed et al (SPIE Photonics West) Junction temperature in LEDs
2005 Furis et al (APL) Spectral and temporal resolution of recombination from multiple excitation states in AlGaN-GaN MQWs
2005 Kim et al (JJAP-Express Letters) White LED with remote phosphor configuration
2005 Luo et al (APL) Analysis of high-power packages for phosphor-based white LEDs
2005 Ramaiah, Bhat et al (JAP) SiC epi layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition
2005 Schubert and Kim (Science) Solid-state light sources getting smart
2005 Schubert et al (Encyclopedia of Chemical Technology) Light Emitting Diodes
2005 Xi JQ et al (Optics Letters) ODR using nanoporous SiO2 as a low-refractive-index material
2005 Xi JQ et al (Nano Letters) Silica nanorod-array films with very low refractive indices
2005 Xi JQ et al (APL) Internal high-reflectivity omni-directional reflectors
2005 Xi JQ et al (LEOS Newsletter) Low-refractive-index films - A new class of optical materials
2005 Xi Y et al (Jpn JAP) Junction temperature in UV LEDs
2005 Xi Y et al (APL) Junction temperature in deep UV LEDs (RPI-Sandia)

2004
2004 Gessmann and Schubert (JAP) High-efficiency AlGaInP LEDs for SSL applications
2004 Kim et al (APL) P-type conductivity in bulk AlGaN and AlGaN-AlGaN SLs
2004 Kim et al (APL) GaInN LEDs with RuO2-SiO2-Ag omni-directional reflector
2004 Schubert (Patent US 6 784 462) LED with planar omni-directional reflector
2004 Xi Y and Schubert (APL) Junction-temperature in GaN UV LEDs using Vf

2003
2003 Gessmann et al (SPIE PW) AlGaInP light-emitting diodes with omni-directionally reflecting submount
2003 Gessmann et al (SPIE PW) GaInN light-emitting diodes with omni directional reflectors
2003 Gessmann et al (IEEE EDL) Omni-directional reflective contacts for LEDs
2003 Li et al (JAP) Carrier dynamics in nitride-based light-emitting pn junction diodes with two active regions emitting at different wavelengths
2003 Shah et al (JAP) Experimental analysis and theoretical model for anomalously high ideality factors in AlGaN-GaN p-n junction diodes
2003 Waldron et al (PRB) Multisubband photoluminescence in p-type modulation-doped AlGaN-GaN superlattices
2003 Waldron et al (APL) Experimental study of perpendicular transport in weakly coupled AlGaN-GaN SLs

2002
2002 Chernyak et al (APL) Influence of electron injection on performance of GaN photodetectors
2002 Gessmann et al (JAP) Ohmic contact technology in III nitrides using polarization effects of cap layers
2002 Gessmann et al (APL) Ohmic contacts to p-type GaN mediated by polarization fields in thin InGaN capping layers
2002 Gessmann et al (J Elec Materials) Ohmic contacts to p-GaN using InGaN capping layers

2001
2001 Guo et al (APL) Efficiency of GaN-InGaN LEDs with interdigitated mesa geometry
2001 Guo & Schubert (APL) Current crowding and optical saturation effects in GaInN-GaN LEDs grown on insulating substrates
2001 Guo & Schubert (JAP) Current crowding in GaN-InGaN LEDs on insulating substrates
2001 Li et al (Phys Stat Sol) Novel polarization-enhanced ohmic contacts to n-type GaN
2001 Waldron et al (Phys Stat Sol) Influence of doping profiles on p-type AlGaN-GaN superlattices
2001 Waldron et al (APL) Improved mobilities and resistivities in modulation doped AlGaN-GaN superlattices

2000
2000 Chernyak et al (APL) Electron beam induced increase in diffusion length in p-type GaN and AlGaN-GaN superlattices
2000 Goepfert et al (JAP) Experimental and theoretical study of acceptor activation and transport properties in p-type AlGaN-GaN superlattices
2000 Graff et al (Cornell Conf) On the reduction of base resistance in GaN-based heterojunction bipolar transistors
2000 Graff and Schubert (Sensors & Actuators) Flat free-standing silicon diaphragms using silicon-on-insulator wafers
2000 Guo et al (Comp Semi) Photon recycling for high-brightness LEDs
2000 Li et al (APL) Low resistance ohmic contacts to p-type GaN
2000 Stocker et al (APL) Optically pumped InGaN-GaN lasers with wet-etched facets
2000 Waldron et al (MRS) Polarization effects in AlGaN-GaN superlattices

1999
1999 Guo et al (IEDM) Photon recycling semiconductor light emitting diode
1999 Goepfert et al (Electron Lett) Demonstration of efficient p-type doping in AlGaN-GaN superlattice structures
1999 Schubert (US patent) Semiconductor having enhanced acceptor activation

1998
1998 Stocker et al (APL) Crystallographic wet chemical etching of GaN
1998 Stocker et al (APL) Facet roughness analysis for InGaN-GaN lasers with cleaved facets
1998 Tu et al (APL) Yellow luminescence depth profiling on GaN epifilms using reacyive ion etching
1998 Tu et al (PRB) Spatial distributions of near-band-gap UV and yellow emission on MOCVD grown GaN epifilms

1997
1997 Billeb et al (APL) Microcavity effects in GaN epitaxial films and in Ag or GaN or Sapphire structures
1997 Fan Joannopoulos et al (PRL) High extraction efficiency of spontaneous emission from slabs of photonic crystals
1997 Peng et al (APL) Band gap bowing and refractive index spectra of polycrystalline AlInN films deposited by sputtering
1997 Schubert Goepfert Redwing (APL) Evidence of compensating centers as origin of yellow luminescence in GaN
1997 Schubert Redwing et al (APL) Optical properties of Si-doped GaN

1996
1996 Grieshaber et al (JAP) Competition between band gap and yellow luminescence in GaN and relevance for devices
1996 Schubert Grieshaber Goepfert (APL) Enhancement of deep acceptor activation in semiconductors by superlattice doping
1996 Schubert et al (IEEE J Lightwave Tech) Modulation characteristics of RCLEDs

1995
1995 Passlack et al (APL) In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
1995 Schubert et al (APL) Phenomenology of Zn diffusion and incorporation InP grown by OMVPE
1995 Tu et al (APL) Superior output linearity of optimized DH vertical-cavity top-emitting lasers

1994
1994 Passlack et al (APL) Dielectric properties of e-beam deposited Ga2O3 films
1994 Schubert et al (Science) Highly efficient light-emitting diodes with microcavities
1994 Schubert et al (APL) Si delta-doping of 011 oriented GaAs and AlGaAs grown by MBE
1994 Schubert et al (APL) Properties of Al2O3 optical coatiangs on GaAs produced by oxidation of epitaxial AlAs-GaAs films

1993
1993 Hunt et al (APL) Increased fiber communications bandwidth from an RCLED emitting at 940 nm
1993 Hunt et al (APL) A resonant-cavity pin photodector utilizing an e-beam evaporated Si-SiO2 microcavity
1993 Kopf et al (JAP) Modification of GaAs-AlGaAs growth-interruped interfaces through changes in ambient conditions
1993 Schubert et al (APL) Enhanced photoluminescence by resonant absorption in Er-doped SiO2-Si microcavities
1993 Vredenberg et al (PRL) Controlled atomic spontaneous emission from Er3+ in a transparent Si-SiO2 microcavity

1992
1992 Hunt et al (Electron Lett) Power and efficiency limits in single mirror LEDs with enhanced intensity
1992 Hunt et al (APL) Enhanced spectral power density and reduced linewidth at 1300 nm in an InGaAsP QW RCLED
1992 Kopf et al (APL) P- and n-type dopant profiles in DBR structures and their effect on resistance
1992 Schubert et al (APL) Giant enhancement of luminescence intensity in Er-doped Si-SiO2 resonant cavities
1992 Schubert et al (APL) Elimination of heterojunction band discontinuities by modulation doping
1992 Schubert et al (APL) Resonant cavity light emitting diode
1992 Tsang et al (APL) Doping in semiconductors with variable activation energy - A new concept and demonstration

1991
1991 Kopf et al (APL) Photoluminescence of GaAs quantum wells grown by MBE with growth interruptions
1991 Pfeiffer et al (APL) Si dopant migration and the AlGaAs-GaAs inverted interface
1991 Tu et al (APL) Transparent conductive metal-oxide contacts in vertical-injection top-emitting QW lasers

1990
1990 Deppe et al (APL) Quarter-wave Bragg reflector stack of InP-InGaAs for 1650 nm wavelength
1990 Gossmann et al (APL) Low temperature Si MBE - Solution to the doping problem
1990 Schubert et al (APL) Low threshold VCSEL with metallic reflectors
1990 Schubert et al (APL) Observation of charge storage and intra-subband relaxation in resonant tunneling via a high sensitivity capacitance technique
1990 Schubert et al (APL) SIMS on delta-doped GaAs grown by MBE
1990 Schubert et al (JAP) Be delta-doping of GaAs grown by MBE
1990 Schubert et al (PRB) Fermi-level-pinning induced dopant redistribution in semiconductors during growth by MBE
1990 Tu et al (APL) VCSELs with semitransparent metallic mirrors and high quantum efficiencies

1989
1989 Deppe et al (JAP) AlGaAs-GaAs and AlGaAs-GaAs-InGaAs VCSELs with Ag mirrors
1989 Glass et al (APL) A novel photo-voltaic delta-doped GaAs SL structure
1989 Hobson et al (APL) Zinc delta-doping of GaAs by OMVPE
1989 Schubert et al (APL) Diffusion and drift of Si-dopants in delta-doped n-type AlGaAs
1989 Schubert et al (APL) Dopant distribution for maximum carrier-mobility in selectively doped AlGaAs-GaAs heterostructures
1989 Schubert et al (APL) Tunable stimulated emission of radiation in GaAs doping SLs
1989 Schubert et al (PRB) Multi-subband photoluminescence in sawtooth doping SLs
1989 Ullrich et al (PRB) Transmission spectroscopy on sawtooth doping SLs

1988
1988 Chiu et al (JAP) Diffusion studies of the Si delta-doped GaAs by CV measurements
1988 Kuo et al (JAP) Selectively delta-doped QW transistor grown by gas source MBE
1988 Malik et al (APL) Carbon doping in MBE of GaAs from a heated graphite filament
1988 Schubert et al (APL) Diffusion of atomic Si in GaAs
1988 Schubert et al (APL) Minimization of dopant-induced random potential flutuations in sawtooth doping SLs
1988 Schubert et al (APL) Spatial localization of impurities in delta-doped GaAs
1988 Schubert et al (PRB) Quantum-confined interband absorption in GaAs sawtooth doping SLs

1987
1987 Chiu et al (APL) Chemical beam epitaxial growth of high-purity GaAs using TMGa and arsine
1987 Cunningham et al (APL) Molecular beam epitaxial growth of igh purity AlGaAs
1987 Schubert et al (APL) Perpendicular electronic transport in doping superlattices
1987 Schubert et al (APL) Selectively delta-doped AlGaAs-GaAs heterostructures with high 2DEG concentrations
1987 Schubert et al (PRB) Type A sawtooth dopng SL - realization of the Esaki-Tsu type SL
1987 Tsang et al APL Growth of high-quality GaInAsP by chemical beam epitaxy

1986
1986 Miller et al, (APL) High quality narrow GaInAs-InP QWs grown by atmospheric OMVPE
1986 Schubert et al (APL) Delta-doped ohmic contacts to n-GaAs
1986 Schubert et al (APL) Self-aligned enhancement and depletion-mode GaAs FETs employing delta-doping
1986 Schubert et al (PRB) Photoluminescence line shape of excitons in alloy semiconductors
1986 Tsang et al (APL) Chemical beam epitaxial growth of extremely high quality GaInAs in InP
1986 Tsang et al (APL) Extremely high quality GaInAs-InP QWs grown by chemical beam epitaxy

1985
1985 Schubert et al (APL) GaAs sawtooth superlattice laser emitting at wavelengths greater 900 nm
1985 Schubert et al (PRB) Electron-impurity tunneling in selectively doped n-AlGaAs-GaAs heterostructures
1985 Schubert et al (PRB) Radiative electron-hole recombination in a new sawtooth SL grown by MBE

1984
1984 Schubert et al (PRB) Alloy broadening in photoluminescence spectra of AlGaAs
1984 Schubert et al (PRB) Shallow and deep donors in direct-gap n-AlGaAs-Si grown by MBE
1984 Schubert et al (PRB) Transient photoconductivity in selectively doped n-type AlGaAs-GaAs heterostructures