Assistant Professor of Electrical, Computer, and Systems
Ph.D., Experimental Condensed Matter Physics, Indian
Institute of Science, 1996
M.S., Physics, Indian Institute of Technology, Bombay,
B.S., Physics, Chemistry, Mathematics, Bombay University,
While completing his doctoral degree, Dutta worked as a Council
for Scientific and Industrial Research Fellow at the Indian
Institute of Science, in Bangalore, India. Subsequently, he
served as a visiting scientist at the Universidad Autonoma
in Madrid, Spain and at the Solid State Physics Laboratory
of Delhi, India. He joined Rensselaer in 1996 as a research
associate in the Department of Mechanical Engineering, Aeronautical
Engineering, and Mechanics. Three years later, he was appointed
as a research assistant professor in the Electrical, Computer,
and Systems Engineering Department. In 2000, he was offered
a tenure track assistant professor position.
Dutta has received two U.S. patents and
has several more pending. He has published over 50 technical
articles in high profile referred journals and presented more
than 40 talks in national and international conferences and
meetings. His professional awards include the National Science
Foundation Early Faculty CAREER Award in 2001, the Rensselaer
Trustees Award for Faculty Achievement in 2001, the Martin
Foster Award for Best Ph.D. Thesis of the Year in 1997, and
the Young Scientist Award at the Eighth International Workshop
on Physics of Semiconductor Devices, in Delhi, India, in 1995.
Dutta's research interests include the development of materials
technology for large-scale applications and manufacturing.
His broad expertise is in the area of advanced photonic and
electronic materials and devices. His materials research and
development efforts span from nanosized crystals to large
diameter bulk ingots. He has over ten years of experience
in semiconductor bulk crystal growth and wafer processing,
electronic and optoelectronic device fabrication, processing,
and testing. Two of his key innovations in the last five years
include development of large diameter ternary and quaternary
bulk III-V substrates, and process development for large-scale
manufacturing of high-quality, tunable-size nanocrystals (or
He and his team of graduate students are
conducting research in the areas of ternary bulk crystal growth,
nanomaterials, free space optical communication, infrared
photodetectors and photovoltaic devices, and III-V antimonide
P.S. Dutta and T.R. Miller,
"Engineering Phase Formation Thermo-Chemistry for Crystal
Growth of Homogeneous Ternary and Quaternary III-V Compound
Semiconductors from Melts," Journal of Electronic
P.S. Dutta and A.G. Ostrogorsky, "Strong
Band Gap Narrowing in Quasi-Binary
(GaSb)x(InAs)1-x Crystals Grown from Melt," Journal
of Crystal Growth, 197,
P. Hidalgo, B. Mendez, J. Piqueras,
P.S. Dutta, and E. Dieguez, "Scanning Tunneling Spectroscopy
of Transition-Metal-Doped GaSb," Physical Review B,
V. Bermudez, P.S. Dutta, M.D. Serrano, and
E. Dieguez, "On the Single Domain Nature of Stoichiometric
LiNbO3 Grown from Melts Containing
K2O," Applied Physics
Letters, 70, 729-731,
P.S. Dutta, H.L.
Bhat, and V. Kumar, "The Physics and Technology of Gallium
Antimonide: An Emerging Optoelectronic Material," Applied
Physics Reviews, Journal of Applied Physics 81, 5821-
P.S. Dutta, A.K. Sreedhar, H.L. Bhat, G.C.
Dubey, V. Kumar, E. Dieguez, U. Pal, and J. Piqueras, "Passivation
of Surface and Bulk Defects in p-GaSb by Hydrogenated Amorphous
Silicon Treatment," Journal of Applied Physics,
79, 3246-3252, (1996).
P.S. Dutta, K.S. Sangunni, H.L. Bhat, and V. Kumar, "Optical
and Electrical Properties of Hydrogen Passivated Gallium Antimonide,"
Physical Review B, 51, 2153-2158, (1995).
P.S. Dutta, A.K. Sreedhar, H.L. Bhat, G.C.
Dubey, Vikram Kumar, and E. Dieguez, "Current Transport
Properties of Metal/a-Si:H/GaSb Structures," Applied
Physics Letters, 67, 1001-1003, (1995).
G. Panin, P.S. Dutta, J. Piqueras, and E.
Dieguez, "P- to N-type Conversion in GaSb by Ion Beam
Milling," Applied Physics Letters, 67, 3584-3586,
P.S. Dutta, K.S.R.K. Rao, K.S. Sangunni,
H.L. Bhat, and V. Kumar, "Donor-Related Deep Level in
Bulk GaSb," Applied Physics Letters, 65, 1412-1414,
P.S. Dutta, K.S. Sangunni, H.L. Bhat, and V. Kumar, "Sulphur
Passivation of Gallium Antimonide Surfaces, Applied Physics
Letters, 65, 1695-1697, (1994).
6015 Low Center for Industrial Innovation
Rensselaer Polytechnic Institute
Troy, N.Y. 12180
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