Alain E. Kaloyeros
— Founding Dean of the School of Nanosciences and NanoEngineering
— Executive Director of the Center of Excellence in Nanoelectronics –
New York
— Executive Director of the Interconnect Focus Center – New York
— Executive Director of the Energy/Environment Technologies
Applications Center
— Executive Director of the New York State Center for Advanced Thin
Film Technology
— Professor of Physics, University at Albany, State University of New York

Ph.D., Experimental Condensed-Matter Physics, University of Illinois at Urbana-Champaign, 1987
License d' Enseignement, Physics and Mathematics, Lebanese University, 1978

Career Highlights:
Kaloyeros holds numerous roles at the University at Albany, including founding dean of the School of Nanosciences and NanoEngineering and executive director of the UAlbany Institute for Materials. He joined the university in 1988 as an assistant professor of physics. In 1993, he began three years of work as a special assistant to the vice president for research. He has served as the co-director of the UAlbany/Rensselaer Joint Laboratories for Advanced Materials (JLAM) for ten years.

In 2002, the Research Foundation of the State University of New York presented Kaloyeros with its Outstanding Inventor Award. He is the recipient of numerous other honors, including the R&D 100 Award for one of the Most Technologically Significant Inventions of the Year in 2001 from R&D Magazine, the Academic Laureate Award from the University at Albany Foundation in 1995, the Presidential Young Investigator Award from the National Science Foundation (NSF) in 1991, the Research Initiation Award from the NSF in 1990, and the Faculty Research Award from the University at Albany in 1989, 1990, and 1991. He also was named Citizen of the University by the University at Albany Foundation in 1999.

Kaloyeros has earned twelve patents, and has published over 125 articles and five invited book chapters.

Research Areas:
Kaloyeros is involved in the development and optimization of advanced vapor phase and liquid phase atomic layer fabrication processes for advanced nanoelectronic, optoelectronic, and photonic single and multi-layered ultrathin film structures for integration in computer chips, biological sensors, microsystems, and energy devices.

In particular, he works with thermal, plasma, and high-density plasma physical and chemical vapor deposition (CVD), as well as atomic layer deposition (ALD) of advanced nanomaterials in tailored ultrathin film and multi-layered structure forms. He is also involved with in-situ and ex-situ electron-, ion-, and x-ray characterization of film surfaces, interfaces, and bulk physical, chemical, and electrical properties.

His research achievements include creating a CVD Cu-based multi-layered metallization scheme for sub-quarter-micron device generations; low-temperature, plasma-promoted CVD Al interconnects for the 0.25 micrometer computer chip technology; high-temperature superconductor interconnect technology for high speed cryoelectronic devices; low-temperature CVD GaN on Si for optoelectronic applications; Ti-based refractory coatings for use as diffusion barrier/glue layer in ultra-large scale integration (ULSI) computer devices; and molecular device and interconnect technologies for Gigascale computer chips.

Selected Publications:
A.E. Kaloyeros, E.T. Eisenbraun, J. Welch, and R.E. Geer, "Molecular Interconnects: Exploiting Nanotechnology for TeraHertz Interconnects," Semiconductor International (January 2003).

R.J. Gutmann, J.-Q. Lu, J.J. MacMahon, P.D. Persans, T.S. Cale, E. Eisenbraun, J. Castracane, and A.E. Kaloyeros, "High Density Multifunctional Integration (HDMI) for Low-Cost Micro/Nano/Opto/Bio Heterogeneous Systems," in press, NanoTech 2003 Conference Digest (2003).

F. Papadatos, S. Skordas, S. Consiglio, E. Eisenbraun, and A.E. Kaloyeros, "Characterization of Ruthenium and Ruthenium Oxide Thin Films Deposited by Chemical Vapor Deposition for CMOS Gate Oxide Applications," in press, Materials Research Society Proceedings, (2003).

S. Skordas, F. Papadatos, G. Nuesca, E.T. Eisenbraun, and A.E. Kaloyeros, "Low Temperature Metal Organic Chemical Vapor Deposition of Al2O3 for Advanced CMOS Gate Dielectric Applications" submitted, Journal of Materials Research, (2002).

J.-Q. Lu, Y. Kwon, G. Rajagopalan, M. Gupta, J. McMahon, K.-W. Lee, R.P. Kraft, J. F. McDonald, T.S. Cale, R.J. Gutmann, B. Xu, E. Eisenbraun, J. Castracane, and A.E. Kaloyeros, "High-Density Multifunctional Integration Schemes," in Proceedings of 2002 IEEE International Interconnect Technology Conference (IITC), 78-80, (2002).

D. Anjum, K. Dovidenko, S. Oktyabrsky, E. Eisenbraun, and A. Kaloyeros, "Physical Properties and Diffusion Characteristics of CVD-Grown TiSiN Films in: Advances in Surface Engineering - Fundamentals and Applications," in press, Materials Research Society Proceedings, 697, (2002).

S. Oktyabrsky, J. Castracane, and A.E. Kaloyeros, "Emerging Technologies for Chip-Level Optical Interconnects," in press, Proceedings of the International Society for Optical Engineering, 4652, (2002).

K. Vydianathan, G. Nuesca, G. Peterson, E.T. Eisenbraun, J.J. Sullivan, B. Han, and A.E. Kaloyeros, "Metalorganic Chemical Vapor Deposition of Titanium Oxide for Microelectronics Applications," Journal of Materials Research, 16, 1838, (2001).

E. Eisenbraun, A. Klaver, Z. Patel, G. Nuesca, and A. Kaloyeros, "Low Temperature Metalorganic Chemical Vapor Deposition of Conformal Silver Coatings for Applications in High Aspect Ratio Structures," Journal of Vacuum Science Technology B, 19, 585, (2001).

A.E. Kaloyeros and E.T. Eisenbraun, "Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization," Annual Review of Materials Science, 30, 363, (2000).

A.R. Londergan, G. Nuesca, C. Goldberg, G. Peterson, B. Arkles, J.J. Sullivan, and A.E. Kaloyeros, "Interlayer Mediated Epitaxy of Cobalt Silicide on Si(100) from Low Temperature CVD of Cobalt Formation Mechanisms and Associated Properties," Journal of the Electrochemical Society, 148, C21, (2000).

A.E. Kaloyeros, X. Chen, S. Lane, H. Frisch, and B. Arkles, "Tantalum Diffusion Barrier Grown by Inorganic Plasma-Promoted Chemical Vapor Deposition: Performance in Copper Metallization," Journal of Materials Research, 15, (12), 2800-2810, (2000).

Contact Information:
Alain Kaloyeros
Cestm B250
University at Albany
251 Fuller Road
Albany, N.Y. 12203
(518) 442-4533

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