Bernard S. Meyerson
— Chief Technologist, IBM Technology Group

Ph.D., Solid-State Physics, City College of the City University of New York, 1980
M.S., Physics, City College of the City University of New York, 1977

Career Highlights:
Meyerson joined the IBM Research division in 1980 and now serves as Chief Technolgist for IBM's Technology Group, and Vice President of the Communications Research and Development Center (CRDC).

A Fellow of the Institute of Electrical and Electronics Engineers (IEEE) and the American Physical Society, Meyerson holds over 40 patents, and has published several hundred technical papers. Throughout his career he has earned numerous prestigious awards, including the IEEE Electron Devices Society J.J. Ebers Award, the 1999 United States Distinguished Inventor of the Year award from the U.S. Patent and Trademark Office, and the 1999 IEEE Ernst Weber Engineering Leadership Award. In 1997, both the New York State Legislature and the Eastern New York Intellectual Property Law Association (ENYIPLA) named him Inventor of the Year. He was elected to the National Academy of Engineering in 2002. In 1992, Meyerson was named an IBM Fellow, his company's highest technical honor.

Research Areas:
Meyerson is a pioneer in the field of materials science who has made major advancements in semiconductor research. His significant contributions include leading the IBM team of researchers that developed silicon-germanium (SiGe) Heterojunction Bipolar Transistor (HBT) technology.

By shortening the chip development process and replacing more expensive, exotic materials with SiGe, he and his team created smaller, cheaper, faster chips. SiGe technology has led to numerous commercial and consumer products, including 40Gbit/sec SONET standard data systems and 802.11b 11Mbit/sec wireless LAN cards.

Meyerson's work with SiGe helped make IBM a leading chip provider to the communications industry, with strong relationships spanning companies as diverse as Tektronix, Hughes Electronics, Northern Telecom, Intersil, Teradyne, and many others.

Selected Publications:
K. Ismail, M. Arafa, K.L. Saenger, J.O. Chu, and B.S. Meyerson, "Extremely High Electron Mobility in Si/SiGe Modulation-Doped Heterostructures," Applied Physics Letters,
66, (9), 1077-1079, (1995).

B.S. Meyerson, "High Speed Silicon-Germanium Electronics," Scientific American, 270, (3), 42-47, (March 1994).

F.K. LeGoues, B.S. Meyerson, and J. Morar, "Anomalous Strain Relaxation in SiGe Thin Films and Superlattices," Physical Review Letters, 66, 2903, (1991).

K. Ismail, B.S. Meyerson, and P.J. Wang, "High Electron Mobility in Modulation Doped Si/SiGe," Applied Physics Letters, 58, 2117, (1991).

G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbe, G.J. Scilla, E. DeFresart, J.M.C. Stork, J.Y.-C. Sun, D.L. Harame, and J. Burghartz, "75 GHz f t SiGe Base Heterojunction Bipolar Transistor," Electron Device Letters, 11, 171, (1990).

G.L. Patton, D.L. Harame, J.M.C. Stork, B.S. Meyerson, G.J. Scilla, and E. Ganin, "Graded SiGe Base/Poly Emitter Heterojunction Bipolar Transistors," Electron Device Letters, 10, 534, (1989).

D.L. Harame, J.M.C. Stork, G.L. Patton, S.S. Iyer, B.S. Meyerson, G.L. Scilla, E.F. Crabbe, and E. Ganin, "Hi Performance Si and Si:Ge-base PNP Transistors," IEEE International Electron Devices Meeting (IEDM) '88 Technical Digest, (1988).

D.L. Harame, J.M.C. Stork, B.S. Meyerson, T.N. Nguyen, and G.J. Scilla, "Epitaxial Base Transistors Fabricated by UHV/CVD Low Temperature Epitaxy," Proceedings of the IEEE International Electron Devices Meeting (IEDM), (1987).

B.S. Meyerson, "Low Temperature Silicon Epitaxy by Ultra-High Vacuum/Chemical Vapor Deposition," Applied Physics Letters, 48, 797, (1986).

B.S. Meyerson and F.W. Smith, "Electrical and Optical Properties of Hydrogenated Amorphous Carbon Films," Journal of Non-Crystalline Solids, 35-36, 435, (1980).

Contact Information:
Bernard S. Meyerson
IBM T.J. Watson Research Center
P.O. Box 218
Yorktown Heights, N.Y. 10598

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