E. Fred Schubert
Senior Constellation Chair - The Future Chips Constellation
Professor of Electrical, Computer, and Systems Engineering
Rensselaer Polytechnic Institute

Ph. D., Electrical Engineering, with honors, University of Stuttgart, Germany, 1986
M.S., Electrical Engineering, with honors, University of Stuttgart, 1981
B.S., Electrical Engineering, University of Stuttgart, 1978

Career Highlights:
After completing his master's degree, Schubert spent four years studying compound semiconductor crystal growth as a scientific staff member at the Max Planck Institute for Solid State Research. He later joined AT&T Bell Laboratories in Holmdel, N.J., where he spent two years as a postdoctoral fellow. From 1988 to 1995, Schubert served as principal investigator in the Research Division of AT&T Bell Laboratories in Murray Hill, N.J. In 1995, he joined Boston University and was appointed to a full professorship in the Department of Electrical and Computer Engineering. He also was named an affiliated member of the Photonics Center. At BU, he was responsible for GaN materials characterization and the fabrication of compound semiconductor devices – particularly GaN-based devices. He continued to serve as an adjunct professor for Boston University from 2002 to 2003.

In 2002, Schubert was appointed Senior Constellation Chair of the Future Chip Constellation and Professor in the Department of Electrical, Computer, and Systems Engineering at Rensselaer.

Schubert authored the books, Light-Emitting Diodes, (2003); and Doping in III-V Semiconductors, (1993); and edited the book, Delta Doping of Semiconductors, (1996), all from Cambridge University Press. Schubert also has published nearly 200 research papers, has contributed several book chapters, and is inventor or co-inventor of about 25 U.S. patents. He was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE), American Physical Society (APS), Optical Society of America (OSA), and the International Society for Optical Engineering (SPIE). He also has received the Senior Research Award of the Humboldt Foundation, Discover Magazine's Discover Award for Technological Innovation, Research & Development Magazine's R&D 100 Award, and Boston University's Provost Innovation Fund Award.

Research Areas:
Schubert's primary research interest is in the field of compound semiconductor materials and devices. His studies include epitaxial growth, materials characterization, device processing and fabrication, device design, and device characterization. Devices include heterobipolar transistors, light-emitting diodes, and lasers for communication, lighting, and sensing applications.

Schubert has made pioneering contributions in compound semiconductor materials and devices. His accomplishments include the discovery and first analysis of alloy broadening, the development of delta doped structures, superlattice doping in p-type GaN and AlGaN for increased acceptor activation, and compositional parabolic grading for elimination of band discontinuities in unipolar heterojunctions. He demonstrated the first resonant-cavity light-emitting diode (RCLED), which is the first practical device taking advantage of spontaneous emission enhancement; he also showed the first spontaneous emission and absorption enhancement in Er-doped Si/SiO2 microcavities.

His recent accomplishments include polarization-enhanced ohmic contacts in III-V nitride materials, the explanation of the high diode ideality factors (> 2.0) found in III-V nitride p-n junction diodes, and the demonstration of high-reflectivity omni-directional reflectors in LEDs for lighting applications.

Selected Publications:
E.F. Schubert, Light Emitting Diodes, Cambridge University Press, Cambridge, UK, (2003).

T. Gessmann, Y.-L. Li, E.L. Waldron, J.W. Graff, and E.F. Schubert, "Ohmic Contacts to p-type GaN Mediated by Polarization Fields in Thin InGaN Capping Layers," Applied Physics Letters, 80, 986, (February 2002).

E.L. Waldron, J.W. Graff, and E.F. Schubert, "Improved Mobilities and Resistivities in Modulation Doped p-type AlGaN / GaN Superlattices," Applied Physics Letters, 79, 2737, (October 2001).

X. Guo and E.F. Schubert, "Current Crowding and Optical Saturation Effects in GaInN/GaN Light-Emitting Diodes," Applied Physical Letters, 78, 3337, (May 2001).

I.D. Goepfert, E.F. Schubert, A. Osinsky, P.E. Norris, and N.N. Faleev, "Experimental and Theoretical Study of Acceptor Activation and Transport Properties in p-type AlxGa1-xN/GaN Superlattices," Journal of Applied Physics, 88, 2030, (August 2000).

X. Guo, J.W. Graff, and E.F. Schubert, "Photon Recycling for High Brightness LEDs," Compound Semiconductors, 6, (4) 1, (May 2000).

Y.-L. Li, E.F. Schubert, J.W. Graff, A. Osinsky, and W. Schaff, "Low-Resistance Ohmic Contacts to p-type GaN," Applied Physics Letters, 19, 2728, (May 2000).

D.A. Stocker, I.D. Goepfert, E.F. Schubert, K.S. Boutros, and J.M. Redwing, "Crystallographic Wet Chemical Etching of p-type GaN," Journal of Electrochemical Society, 147, 763, (February 2000).

E.F. Schubert and N. E. J. Hunt. "Enhancement of Spontaneous Emission in Microcavities," in Vertical-Cavity Surface-Emitting Lasers, C. Wilems , H. Temkin, and L. A. Coldren, eds., ISBN #0 521 59022 1, 68, Cambridge University Press, Cambridge, (April 1999).

E.F. Schubert and J.N. Miller, "Light-Emitting Diodes," in Wiley Encyclopedia of Electrical and Electronics Engineering, 11, 326, John Wiley & Sons, New York, (1999).

Contact Information:
E. Fred Schubert
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180
(518) 276-8775

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