E. Fred Schubert
Senior Constellation Chair - The Future Chips Constellation
Professor of Electrical, Computer, and Systems Engineering
Rensselaer Polytechnic Institute
Ph. D., Electrical Engineering, with honors, University of
Stuttgart, Germany, 1986
M.S., Electrical Engineering, with honors, University of Stuttgart, 1981
B.S., Electrical Engineering, University of Stuttgart, 1978
After completing his master's degree, Schubert spent four
years studying compound semiconductor crystal growth as a
scientific staff member at the Max Planck Institute for Solid
State Research. He later joined AT&T Bell Laboratories
in Holmdel, N.J., where he spent two years as a postdoctoral
fellow. From 1988 to 1995, Schubert served as principal investigator
in the Research Division of AT&T Bell Laboratories in
Murray Hill, N.J. In 1995, he joined Boston University and
was appointed to a full professorship in the Department of
Electrical and Computer Engineering. He also was named an
affiliated member of the Photonics Center. At BU, he was responsible
for GaN materials characterization and the fabrication of
compound semiconductor devices particularly GaN-based devices.
He continued to serve as an adjunct professor for Boston University
from 2002 to 2003.
In 2002, Schubert was appointed Senior Constellation
Chair of the Future Chip Constellation and Professor in the
Department of Electrical, Computer, and Systems Engineering
Schubert authored the books, Light-Emitting
Diodes, (2003); and Doping in III-V Semiconductors,
(1993); and edited the book, Delta Doping of Semiconductors,
(1996), all from Cambridge University Press. Schubert also
has published nearly 200 research papers, has contributed
several book chapters, and is inventor or co-inventor of about
25 U.S. patents. He was elected a Fellow of the Institute
of Electrical and Electronics Engineers (IEEE), American Physical
Society (APS), Optical Society of America (OSA), and the International
Society for Optical Engineering (SPIE). He also has received
the Senior Research Award of the Humboldt Foundation, Discover
Magazine's Discover Award for Technological Innovation,
Research & Development Magazine's R&D 100 Award,
and Boston University's Provost Innovation Fund Award.
Schubert's primary research interest is in the field of compound
semiconductor materials and devices. His studies include epitaxial
growth, materials characterization, device processing and
fabrication, device design, and device characterization. Devices
include heterobipolar transistors, light-emitting diodes,
and lasers for communication, lighting, and sensing applications.
Schubert has made pioneering contributions
in compound semiconductor materials and devices. His accomplishments
include the discovery and first analysis of alloy broadening,
the development of delta doped structures, superlattice doping
in p-type GaN and AlGaN for increased acceptor activation,
and compositional parabolic grading for elimination of band
discontinuities in unipolar heterojunctions. He demonstrated
the first resonant-cavity light-emitting diode (RCLED), which
is the first practical device taking advantage of spontaneous
emission enhancement; he also showed the first spontaneous
emission and absorption enhancement in Er-doped Si/SiO2
His recent accomplishments include polarization-enhanced
ohmic contacts in III-V nitride materials, the explanation
of the high diode ideality factors (> 2.0) found in III-V
nitride p-n junction diodes, and the demonstration of high-reflectivity
omni-directional reflectors in LEDs for lighting applications.
E.F. Schubert, Light Emitting Diodes, Cambridge University
Press, Cambridge, UK, (2003).
T. Gessmann, Y.-L. Li, E.L. Waldron, J.W.
Graff, and E.F. Schubert, "Ohmic Contacts to p-type GaN
Mediated by Polarization Fields in Thin InGaN Capping Layers,"
Applied Physics Letters, 80,
986, (February 2002).
E.L. Waldron, J.W. Graff, and E.F. Schubert,
"Improved Mobilities and Resistivities in Modulation
Doped p-type AlGaN / GaN Superlattices," Applied Physics
Letters, 79, 2737,
X. Guo and E.F. Schubert, "Current
Crowding and Optical Saturation Effects in GaInN/GaN Light-Emitting
Diodes," Applied Physical Letters, 78,
3337, (May 2001).
I.D. Goepfert, E.F. Schubert, A. Osinsky,
P.E. Norris, and N.N. Faleev, "Experimental and Theoretical
Study of Acceptor Activation and Transport Properties in p-type
AlxGa1-xN/GaN Superlattices," Journal of Applied Physics,
88, 2030, (August 2000).
X. Guo, J.W. Graff, and E.F. Schubert, "Photon
Recycling for High Brightness LEDs," Compound Semiconductors,
6, (4) 1, (May 2000).
Y.-L. Li, E.F. Schubert, J.W. Graff, A.
Osinsky, and W. Schaff, "Low-Resistance Ohmic Contacts
to p-type GaN," Applied Physics Letters, 19,
2728, (May 2000).
D.A. Stocker, I.D. Goepfert, E.F. Schubert,
K.S. Boutros, and J.M. Redwing, "Crystallographic Wet
Chemical Etching of p-type GaN," Journal of Electrochemical
Society, 147, 763,
E.F. Schubert and N. E. J. Hunt. "Enhancement
of Spontaneous Emission in Microcavities," in Vertical-Cavity
Surface-Emitting Lasers, C. Wilems , H. Temkin, and L.
A. Coldren, eds., ISBN #0 521 59022 1, 68, Cambridge University
Press, Cambridge, (April 1999).
E.F. Schubert and J.N. Miller, "Light-Emitting
Diodes," in Wiley Encyclopedia of Electrical and Electronics
Engineering, 11, 326,
John Wiley & Sons, New York, (1999).
E. Fred Schubert
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180
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