Facilities

For more information, contact:
Dr. Michael Shur, Director
(518) 276-2201
shurm@rpi.edu

Fabrication Facilities

Rensselaer supports the Microelectronics Clean Room facility that is used to fabricate silicon and compound semiconductor structures, devices, and circuits with submicron feature sizes. Baseline silicon processes for NMOS and CMOS are utilized on a regular basis as the vehicles for Microelectronic Manufacturing Laboratory courses, and to provide researchers with the capability of materials research within existing integrated processes. Special emphasis is given to processes for novel planarization and metallization as used with multi-level metal systems for both chip and packaging module fabrication.

The Microfabrication facility is equipped with tools that can handle 3", 5", and 8” wafers. Many tools have also been modified to

Microelectronics Clean Room facility

enable the processing of non-standard substrate sizes and shapes commonly found in compound semiconductor research applications. The equipment base is comparable with an industrial semiconductor fabrication operation. A comprehensive capability for measurement and characterization of devices, circuits and materials is available within the Clean Room environment. Extended capability exists within affiliated laboratories at RPI for characterization and analysis.

 

Photoluminescence facilities

The photoluminescence (facility is grouped into two set-ups. All the optics is designed to work into UV region up to 200 nm. The first set-up is for measurement of spontaneous and stimulated emission under CW photoexcitation. The CW source generates 20 mW in single mode at 325 nm. Quantel Q-switched Nd:YAG laser with harmonic converters up to the fifth.

 

Dynamic Grating Setup

 

Pulse duration (FWHM) of the laser at 1064 nm is 4.4 ns, repetition rate is 10 Hz.  The sample temperature could be varied from 8 K to 600 K. The second set-up is based on a picosecond Nd:YAG laser and is equipped with a streak camera for time-resolved measurements and with the unit HOLO-2 to perform experiments based on Light-Induced Transient Gratings (LITG). The harmonics of the main laser may be used to pump an Optical Parametric Generator PG401 /SH with internal frequency doubling to ensure continuous tunability of output wavelength down to 200 nm into UV region. Data analysis software packages are also available.

Terahertz and Sub-Terahertz Characterization

The terahertz characterization setup uses 200 GHz and 600 GHz radiation systems based on a 100 GHz Gunn diode with a frequency doubler (for the 200 GHz system) or doubler and tripler (for the 600 GHz system). The maximum output power was about 3 mW for the 200 GHz system and 0.3 mW for the 600 GHz system, respectively. In addition to the main frequencies (200GHz and 600GHz) the system also emitted higher harmonics at 800 GHz, 1THz, and 1.2THz. The relative power of the higher harmonics depends on the Gunn diode and on the doubler and the tripler adjustments. It could reach a few percent of the power emitted at the main frequencies. Bruker FTIR (IFS 66 V/S) vacuum spectrometer whose spectral range is expanded from far-IR (FIR) to the near-UV. The evacuated optics and purge system make the IFS 66 V/S ideal for FIR measurements (Eliminate Water and CO2 bands from measured spectrum). Our IFS 66 V/S equipped with an ultra-low temperature bolometer, which has the working temperature lower than 1.7 K. Spectrum range: 12000 cm-1 to 5 cm-1. signal to noise ratio: 10000:1 (mid-IR) in 5 second test, high resolution: 0.1 cm-1 (about 30 GHz). This system is used to measure THz emission.

 

Terahertz characterization setup

 

 

 

Bruker FTIR Spectrometer

 

Acousto-Optic facilities

 

 The acousto-optic facility allows for excitation and characterization of surface and bulk acoustic waves in the time and frequency domains. The RF oscillator/receiver (Matec Inc. Model 7700) provides high power (up to several hundreds watts) microsecond RF pulses in the range from 90 to 1050 MHz, and the high sensitivity (receiver gain is 110 dB) tuned signal reception. The Agilent 4396B Network/Spectrum/Impedance Analyzer provides full-vector network and spectrum measurement and analysis in the range from 100 kHz to 1.8 GHz.

 

Acousto-optic setup

The optical part of the set-up is adapted to work with guided optical waves propagating in thin surface layers. The He Ne (JDS Uniphase 1125P, 5 mW) and He Cd (Liconix 4210N, 10 mW) lasers serve as CW optical sources at 633 nm and 442 nm, respectively. The Hamamatsu PMT module HC141-H6780-01 and Oriel Instruments InstaSpec IV CCD System 78451 are used as optical receivers for the signal characterization in time and space, respectively. The oscilloscope Tektronix TDS 3054 allows direct observation of RF signals with frequencies up to 500 MHz.

 

Low frequency noise system

 

Our low frequency noise measurement setup includes Stanford Research System Network Analyzer, EG&G Instruments Pre-Amplifier, Micro Manipulator Probe Station, and a low noise bias circuit.  The noise can be measured both on the wafers using the probe station and on packaged devices. The probe station is placed on the vibration isolated optical table. Micromanipulator probe station is placed in a metal box for electromagnetic and light isolation. The measured noise floor is around -165 dBVrms/Hz  in the frequency range from 1 Hz to 50 kHz.  (DC current voltage characteristics and impedance within the frequency range 5Hz – 13 MHz can be measured in the same experimental area.)

Low frequency noise measurement setup

 

Computer resources and Remote Experimentation

 

 We have all required computer resources and device modeling commercial and custom software, including ATLAS, Medici, Poisson-Schrödinger equation solvers, ISE simulation package, Monte Carlo simulation packages (including our own validated 2D self-consistent Monte Carlo Boltzmann equation solver), AIM-Spice package for the simulation of advanced devices, including unique optoelectronic and self-heating models, and automatic parameter extractor.  Our group co-developed AIM-Spice that has estimated 50,000 world wide. We also assembled a large database of semiconductor materials parameters partially available at our web page [1] and partially published in three handbooks of semiconductor parameters. [2] We are installing a supercomputer cluster (funded IBM SUR grant valued over $600,000) and several workstations. We have operational Remote Laboratory on the WEB [3] (patent pending) that allow for performing remote experimentation on the WEB and co-edited a book describing different approaches to remote

 

 

 

Microwave Characterization Facility

 

Two high-temperature probes with ground‑signal‑ground configuration and 150 mm contact spacing are used to contact transistors on-waver. For the on-waver calibration, a substrate CS-5 from GGB Industries with a full‑two‑port‑LRM (line-reflect-match) technique is utilized. A noise source MT7618E from Maury Microwave can be switched between two noise temperatures by a noise figure meter Maury MT2075C. The direct input tuning range of the noise figure meter is limited to frequencies below 2.047 GHz. The microwave setup is designed for frequencies up to 18 GHz.

Microwave setup

 

 

Related facilities

 

Other facilities include automated of I-V and C-V measurement systems. We also have materials characterization facilities, including Hall, SEM, TEM, and X-ray characterization facilities. We are routinely using national characterization facility for magneto transport measurements up to 30 T at temperatures down to mK.

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[1] http://nina.ecse.rpi.edu/shur

[2] M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Editors, “Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, and SiGe“, John Wiley and Sons, ISBN 0-471-35827-4, New York (2001)

M. E. Levinshtein, S. Rumyantsev, and M. S. Shur, Editors, Handbook of Semiconductor Material Parameters, Vol. 2, Ternary and Quaternary III-V compounds, World Scientific, ISBN 981-02-1420-0 (1999)

M. E. Levinshtein, S. Rumyantsev, and M. S. Shur, Editors, Handbook of Semiconductor Material Parameters, Si, Ge, C (diamond), GaAs, GaP, GaSb, InAs, InP, InSb, Vol. 1, World Scientific, 1996, ISBN981-02-2934-8517

[3] http://nina.ecse.rpi.edu/shur/remote/