Wide Band Gap Semiconductors

Unique materials properties of wide band gap semiconductors make them extremely promising for high-power high-temperature high-frequency applications, including applications for base stations for wireless communication systems.

In the Center for Broadband Data Transport Science and Technology, researchers are exploiting the unique properties of these compounds to produce devices that exhibit record power levels and low noise operation required for future data transport systems. Other wide band gap semiconductor applications under development include visible and ultra-violet light-emitting diodes, and acousto-optic devices. Potential uses of this technology include massive data storage systems, as well as applications in solid-state lighting and in the detection of hazardous biological agents.

Ongoing research studies also involve the theory and experimental investigations of ballistic transport in semiconductors, as well as epitaxial growth, materials characterization, device processing and fabrication, device design, and device characterization. Devices include heterojunction transistors, light-emitting diodes, and lasers for communication, lighting, and sensing applications.

Among the pioneering contributions in compound semiconductor materials and devices made by Center researchers are the discovery and first analysis of alloy broadening, the development of delta-doped structures, superlattice doping in p-type GaN and AlGaN for increased acceptor activation, and compositional parabolic grading for elimination of band discontinuities in unipolar heterojunctions. Members also have demonstrated the first resonant-cavity light-emitting diode (RCLED), which is the first practical device taking advantage of spontaneous emission enhancement; and also showed the first spontaneous emission and absorption enhancement in Er-doped Si/SiO2 microcavities.

Other recent accomplishments include polarization-enhanced ohmic contacts in III-V nitride materials, the explanation of the high diode ideality factors (> 2.0) found in III-V nitride p-n junction diodes, and the demonstration of high-reflectivity omni-directional reflectors in LEDs for lighting applications.

For more information on the Center's work on wide band gap semiconductors, please contact:

Dr. Michael Shur, Director
(518) 276-2201
shurm@rpi.edu

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Terahertz for Broadband | Wide Band Gap Semiconductors

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