Slide 30 of 64
Silicon Germanium or SiGe HBTs offer a new materials system for pursuing our research. One immediate advantage of SiGe is the lower turn on voltage of 0.7 volts instead of 1.4 volts for GaAs HBTs. In addition the SiGe HBT is apparently cryogenic compatible as will be discussed later. Finally, aggressive scaling of the emitter stripe makes it possible to see high speed with a device whose power dissipation might decrease with the square of the scaling parameter. This assumes something cleaver will happen in interconnect scaling too.