Slide 39 of 64
Notes:
Recently (June 1998) an extremely exciting paper has been published by Hitachi, in which SiGe HBTs with very aggressively scaled emitter stripes have exhibited very high fT vs. Ic curve peaks at very tiny emitter stripe widths. This has led them to announce that high HBT speed is possible at power levels that appear to extend the range over which emitter scaling can take place and still enjoy the linear power reduction with the AREA parameter.