ï 4 chip superscalars as fast as 128,000MIPS with 16 GHz clocks is possible with 100 GHz SiGe Graded Base HBTís for order of < ~100 watts due to low Vbe of only 0.7V and 0.25 _m emitter stripes.
ï Heterostructures are required to make the thin bases needed for these100 GHz ft device technologies while still exhibiting decent BVceo.
ï Avoids some of the challenges faced by CMOS [3 molecule thick thin-oxide, exotic lithography, low absolute numbers of dopant atoms for setting device thresholds, high tunneling leakage, requirement of a dual ìupper-lowerî gate].
ï For these high speeds we NEVER want to turn a current OFF, we only want to steer the current over various paths!
ï Low Dynamic Power demands 200 mV Logic Swings!
HBT Yields of 40K are required to meet these objectives but the minimum feature sizes NEED NOT be too small.
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